Modeling and Performance Analysis of Gallium Arsenide Based P-I-N Solar Cells

Authors

  • Md. Razuan Hossain Department of Electrical, Electronic and Communication Engineering, Military Institute of Science and Technology, Dhaka 1216 Bangladesh,
  • Farhan S. Chowdhury Department of Electrical, Electronic and Communication Engineering, Military Institute of Science and Technology, Dhaka 1216 Bangladesh,
  • Md. Al-Mamun Sabuz Department of Electrical, Electronic and Communication Engineering, Military Institute of Science and Technology, Dhaka 1216 Bangladesh,

DOI:

https://doi.org/10.37591/joedt.v6i2.4946

Abstract

Current technology has made a lot of inspection and also facing many difficulties for optimizing a solar cell’s efficiency. Many previous works had been done on p-n junction solar cells to achieve the maximum performance. But a few researches show us that the performance of p-i-n solar cell has not yet reached its optimum level. Thus in this paper we concentrate on an analysis of Gallium Arsenide based p-i-n solar cell and achieve the maximum efficiency of a Gallium Arsenide based p-i-n solar cell. In this paper we ascertain a specific method to virtually design a Gallium Arsenide p-i-n solar cell and analyse its efficiency at different doping concentrations using device simulator. After doing rigorous analysis a maximum efficiency of 17.56 % was achieved for Gallium Arsenide solar cell. In this methodology we have perceived the foremost implementation of the unit cell in several doping concentrations. In this paper a comparison was made on the performance of Gallium Arsenide based p-i-n solar cell and suitable results were achieved. Keywords: fill factor, efficiency, doping, intrinsic

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Published

2021-01-13

Issue

Vol. 6 No. 2 (2015)

Section

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