Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors

Abstract

Abstract

In this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.

Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistor

Cite this Article

Subhadeep Mukhopadhyay. Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors. Journal of Microwave Engineering & Technologies. 2018; 5(1): 13–24p.