Sub-nano Regime DG-MOSFETs
Abstract
Abstract
The significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF).
Keywords: Transfer characteristics curve, Double gate MOSFETs, ION, DIBL, SS
Cite this Article
Md. Rabiul Islam, Md. Rokib Hasan, Md. Abdul Mannan et al. Sub-nano Regime DG-MOSFETs. Journal of Semiconductor Devices and Circuits. 2018; 5(3): 1–6p.
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DOI: https://doi.org/10.37591/josdc.v5i3.1037
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