Modeling of Voltage Buffer and Memristor Voltage Buffer Using 180 nm Technology

Authors

  • Herman Al Ayubi Department of Electronics and Communication Engineering (VLSI Design), School of ICT, Gautam Buddha University, Greater Noida, U.P, India
  • navaid Z. rizvi
  • piyush K. Mishra

DOI:

https://doi.org/10.37591/jovdtt.v6i1.2973

Abstract

Objective of this paper is the analysis of voltage buffer and is referred to as a common drain amplifier or that can be considered as a source follower also. It compares the result of simple voltage buffer that results with the memristor inbuilt in the same schematic circuit of voltage buffer. Memristor is considered as a fourth existing component after the resistor, capacitor and an inductor proposed by Dr. L.O. Chua who defined it as the relationship between the flux and charge which is based upon ohm’s law and it behaves as both, feature of linear resistor and non-linear characteristic.

 

Keywords: Simpler voltage buffer (SVB), Memristor voltage buffer (MVB), Single memristor voltage buffer (Single Memristor Voltage Buffer), Double memristor voltage buffer (DMVB), Common drain amplifier (CDA), Source follower (SF)

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Published

2019-08-09

Issue

Vol. 6 No. 1 (2016)

Section

Articles

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