Design and Implementation of Low Noise Amplifier using 90 nm MOS Technology for Bluetooth

Authors

  • akash mecwan Institute of Technology, Nirma University, Ahmedabad, Gujarat, India
  • nikunj marodiya
  • vimal zalariya

DOI:

https://doi.org/10.37591/jovdtt.v4i3.2937

Abstract

In the era of Miniaturization it is necessary that analog field develops at par with the digital world. To design RF circuit on the single chip it is necessary that noise performance of active semiconductor devices are studied and configure the devices in such a way that noise gets minimized. In this paper various kinds of noise in the devices are explained at a brief. Low Noise Amplifier for Bluetooth band is designed and layout is formed. Design of reactive components like capacitors and inductors is also presented in this paper.

 

Keywords: LNA, RF Front end, Low noise, Noise figure

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Published

2019-08-08

Issue

Vol. 4 No. 3 (2014)

Section

Articles

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