A Review on Tunnel Field Effect Transistor for Ambipolar Suppression, Higher ON Current and a Lower Subthreshold Swing

Authors

  • Radhika M. Somani Department of Electronics & Telecommunications, Shree Ramchandra College of Engineering, Pune, Maharashtra, India
  • H. R. Upadhyay Department of Electronics & Telecommunications, Shree Ramchandra College of Engineering, Pune, Maharashtra, India
  • K. Sujatha Department of Electronics & Telecommunications, Shree Ramchandra College of Engineering, Pune, Maharashtra, India

DOI:

https://doi.org/10.37591/jovdtt.v8i2.669

Abstract

Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by dielectric and gate material work function engineering.


Keywords: Radio frequency (RF), high-k, low-k gate work function, MOSFET

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Published

2018-08-16

Issue

Vol. 8 No. 2 (2018)

Section

Articles

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