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Influence of Graded Channel on Performance of Symmetric Double Material Gate Insulator FDSOI MOSFET

Anjali Gupta, R. K. Chauhan

Abstract


Abstract: In this paper, we investigate the effect on the linearity, analog and RF performance of graded channel in case of hetero-gate-dielectric FDSOI MOSFET with higher doping at source end and low doping at drain end. The major figure of merits (FOMs) studied are on-state drive current (ION), transconductance (gm), total gate capacitance (Cgg), cut-off frequency (fT), higher order derivative of transconductance (gm’, gm’’), intermodulation distortion (IMD3) and third- order voltage intercept point (VIP3). It is examined that most of the FOMs gets improved in case of graded channel symmetric double material gate insulator (GC SDMGI) FDSOI MOSFET. Silvaco TCAD tool has been used for all the simulation.

Keywords: FDSOI, Hetero-gate-dielectric, radio frequency, high-k

Cite this Article

Anjali Gupta, R. K. Chauhan. Influence of Graded Channel on Performance of Symmetric Double Material Gate Insulator FDSOI MOSFET. Journal of Microelectronics and Solid State Devices. 2019; 6(1): 12–17p.  


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