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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell

S R Mansore, R S Gamad, D K Mishra

Abstract


Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) over 6T cell at 0.8V. Proposed topology dissipates 1.49x lesser static power compared to the convention 6T cell at 0.8V.


Keywords


HSNM; RSNM; SRAM; WSNM

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References


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Cite this Article

S.R. Mansore, R.S. Gamad, D.K. Mishra. Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell. Journal of Microelectronics and Solid-State Devices. 2019; 6(2): 26–31p


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