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Switching Loss Calculation of Power MOSFET using the Estimation Technique

Soumya Sen, Souvik Saha, Angshuman Khan, Rajeev Arya


An accurate analytical model is very important to measure the switching losses of Power
MOSFET. The perfect estimation of Power MOSFET switching loss is very difficult to predict
the efficiency of the power electronics circuit. This paper investigates the basic internal
physics of the Power MOSFET device and proposed the best possible analytical model to
calculate the power loss. The pre-existing widely accepted power loss calculation method is
found to be useless and inaccurate. In addition, the result of the pre-existing method is
overestimated to apply approximating switching time. This paper focused on new charge
parameters specification and switching time estimation technique to measure less erroneous
switching losses of Power MOSFET.

Keywords: DESSIS, Estimation technique, Power MOSFET, Switching loss, Sabre RD

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I W Eberle, Z Zhang, Y F Liu, and P C Sen, “A simple switching loss model for high switching frequency DC-DC converters,” in Proc. IEEE Appl. Power Electron. Conf. (APEC), Austin, TX, Feb. 2008, pp. 36–42.

Z Zhang, W Eberle, Z Yang, Y F Liu, and P C Sen, “Optimal design of a current source gate driver,” IEEE Trans. Power Electron, Mar 2008, vol. 23, no. 2, pp. 653–666.

Y Ren, M Xu, J Zhou, and F C Lee, “Analytical loss model of power MOSFET,” IEEE Trans. Power Electron, Mar 2006, vol. 21, no. 2, pp. 310–319.

J Brown, “Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter,” IEEE Trans. Power Electron, Jan. 2006, vol. 21, no. 1, pp. 3–10.

Q Zhao and G Stojcic, “Design considerations for a new generation mid voltage power MOSFET technology,” in Proc. Appl. Power Electron. Conf. Expo., 2005, pp. 336–342.

Z J Shen, Y Xiong, X Cheng, Y Fu, and P Kumar, “Power MOSFET switching loss analysis: A new insight,” in Proc. IEEE IAS Meeting, Tampa, FL, Oct. 2006, pp. 1438–1442.

C Cavallaro, S Musumeci, R Pagano, A Raciti, and K Shenai, “Analysis modelling and simulation of low-voltage MOSFETs in synchronous rectifier buck-converter applications,” in Proc. 29th Annu. Conf. IEEE Ind. Electron. Soc. 2003 (IECON), Nov 2003, vol. 2, pp. 1697–1702.

C S Mitter, “Device consideration for high current, low voltage synchronous buck regulator (SBR),” in Proc. IEEEWescon 1997, Santa Clara, CA, pp. 281–288.

E Ritchie, J K Pedersen, F Blaabjerg, and P Hansen, “Calorimetric measuring systems,” IEEE Ind. Appl. Mag, May/Jun. 2004, vol. 10, no. 3, pp. 70–78

G Cauffet and J P Kermadec, “Digital oscilloscope measurements in high-frequency switching power electronics,” IEEE Trans. Instrum. Meas, Dec. 1992, vol. 41, no. 6, pp. 856–860.



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