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Design of Voltage Controlled Oscillator using GDPK 90nm CMOS Technology

Pujan Vasoya, Dipesh Panchal


In the recent decade, there has been a major revolution in communication systems and devices. Many communication devices required a specific frequency which may range from a few Hz to several GHz by source of voltage. Voltage Control Oscillator (VCO) plays a major role in today’s modern communication system. Voltage Control Oscillator use as basic building block in communication circuits and major use in phase locked loops circuits. Due to the decrease of the channel length of MOSFET, there is a continuous evolution in voltage control oscillator design to achieved high frequency (GHz) operation at lower technology nodes. An oscillator is an essential part of numerous electronic devices and has large numerous applications for wireless devices. This paper is focused on the design of a voltage control oscillator (VCO) using GDPK 90nm CMOS technology in cadence. Mixed Ring Oscillator required less area compared to Ring Oscillator and LC based Oscillator because it is straight forward design and there is no requirement of any passive component like an inductor. Design of 3 Stage Current Starved Voltage Control Oscillator (VCO) has an odd number of cascaded inverters which placed back-to-back and the last inverter stage output is directly fed to the first inverter stage as input.. Voltage Control Oscillator is designed using 90nm CMOS technology with 1.2V power supply voltage. Voltage Control Oscillator output oscillates at a high-frequency range starting from 8.86Ghz to 15.11Ghz by varying a control voltage from 0.3V to 1.2V. The power consumption of the voltage control oscillator is 0.214-milliwatt at 15.61 GHz frequency.


VCO, CMOS, high frequency, MOSFET, inverter

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