Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs

Abstract

Abstract
In this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the microelectronic single-heterojunction AlGaN/GaN HEMTs.

Keywords: Aluminium nitride, microelectronic, drain current, drain voltage, gate voltage

Cite this Article
Sanjib Kalita, Laishram Thoibileima Chanu, Subhadeep Mukhopadhyay. Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs. Journal of Microelectronics and Solid State Devices. 2017; 4(3): 9–12p