Simulation Study of Tapered Shape FinFET

Authors

  • A. Shrivastava
  • S. Singh
  • A. Acharya
  • G Musalgaonkar Department of Electronics and Communication Engineering, Thapar University, India Department of Electronics and Communication Engineering, ITM University, India

DOI:

https://doi.org/10.37591/jovdtt.v6i1.2965

Abstract

During recent years, nonplaner tri-gate (TG) field-effect transistors (FETs) such as FinFETs have been extensively studied for the enhancement of electrostatic control and suppression of short-channel effects (SCEs) in the sub50 nm regime. As the device scaled, it is observed that the shape of the rectangular FinFET becomes tapered shape. This paper presents the design and analysis of a tapered-shaped FinFET. By varying the sidewall inclination angle of a rectangular FinFET, a tapered shape FinFET has been obtained. This structure has been studied by taking different inclination angles. Various parameters such as drain current, conduction band energy, and ION/IOFF has been calculated. It is observed that the tapered shape FinFET gives better performance and reduced corner effect as compared to the rectangular FinFET.

 

Keywords: rectangular FinFET, tapered shape FinFET, corner effects, drain current, conduction band energy

 

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Published

2019-08-09

Issue

Vol. 6 No. 1 (2016)

Section

Articles

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