Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review

Abstract

Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire devices. Secondly, it introduces the basic NWFET and evaluates the performance comparison with different devices such as SGMOSFET, DGMOSFET and CNTFET. In nanometer regime, the quantum capacitance of FET devices decides the gate capacitance. CNTFET and NWFET have appreciable characteristics to reduce the gate capacitance by reducing the oxide thickness in deep nanometer regime, which is not attainable to get in SGMOSFET and DGMOSFET. It is also seen that NWFETs and CNTFETs are considered as the most potential devices, due to their process compatibility with planar CMOS, small-off-leakage current and high-on-current.

Keywords: NWFET, CNTFET, ultra-thin body (UTB), short channel effects (SCE), chemical vapor deposition (CVD), chemical beam epitaxy (CBE)