Analytical Analysis for Porous Silicon to Compute Porosity Using Optical Sensing Device

Authors

  • Gopinath Palai Head (ECE), Dean (R&D)
  • Bhopendra Singh

DOI:

https://doi.org/10.37591/rtsrt.v4i2.339

Abstract

This paper investigates the percentage of porosity in silicon using optical device. During the measurement of porosity, reflections as well as absorption losses are included to find out the transmitted intensity. Analytical results for the same reveals that reflectance, absorbance as well as transmittance vary linearly with respect to different percentage of porosity in the silicon. It is also seen that transmitted intensity through silicon varies linearly with respect to same percentages. The excellent linear variation (R2 = 0.9961) of transmitted intensity leads to an accurate measurement of porosity in porous silicon.

Keywords: Porous silicon, porosity, reflectance, absorbance, transmittance, transmitted intensity

Cite this Article

G. Palai, Bhopendra Singh. Analytical Analysis for Porous Silicon to Compute Porosity Using Optical Sensing Device. Recent Trends in Sensor Research & Technology. 2017; 4(2): 1–5p.

Author Biography

  • Gopinath Palai, Head (ECE), Dean (R&D)
    Department of Electronics and communication engineering, Gandhi Institute for Technological Advancment GITA, Janla, Bhubaneswar

Published

2018-01-29

Issue

Section

Research Articles