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Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application
Abstract
Abstract
Optical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.
Keywords: SG-SOI, PWE, power
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PDFDOI: https://doi.org/10.37591/toeoc.v3i2.1890
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