Understanding of optical power in semiconductor based SOI Structure at the signal 1550 nm

Abstract

A silicon-on-insulator (SOI) structure consists of a single crystalline silicon layer separated from the bulk substrate by a thin insulator layer. The insulator in SOI wafers is usually always a thermal silicon oxide (SiO2) layer, with a silicon wafer as the substrate. The silicon sheet can be very thin (50 nm for fully depleted transistors) or tens of micrometres thick, depending on the application. Similarly, the thickness of buried oxide varies from tens of nanometers to several micrometres. Wafers are manufactured in a variety of ways. Because of the low-loss dielectric substrate, silicon-on-sapphire (SOS) is another SOI technology that offers certain additional advantages for manufacturing of CMOS circuits in microwave applications. This research investigates the optical power of a semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm. The plane wave expansion (PWE) method is used to calculate the power of the SG-SOI structure. The simulation results show that the optical power in all SG-SOI structures is greater than 99.9%. The simulation results reveal that appropriate grating layer combinations are critical for obtaining high optical power.