Analysis of VLSI Circuits Designed with Single and Dual Channel Strained Silicon MOSFETs in Nanoregime

Abstract

In this paper, performance of the VLSI circuits designed with strained silicon MOSFETs is analysed and
compared with bulk MOSFET. Emphasis is being given on the evaluation of speed, power and noise
characteristics. An inverter circuit designed with single channel and dual channel biaxial strained MOSFETs
of 40 nm channel length and 0.3 germanium mole-fraction is being taken to evaluate the performance through
simulation. The device design and circuit simulation is done in Sentaurus TCAD tool. The designed strained
silicon MOSFETs shows increased carrier mobility, carrier velocity and drive current than bulk MOSFET.
Dual channel biaxial strained MOSFET shows even much better performance than single channel biaxial
strained MOSFET. The inverter circuit designed with this dual channel biaxial strained silicon MOSFETs
shows much lesser delay and power consumption as compared to circuit designed with single channel strained
MOSFET and bulk MOSFETs. Thus, the circuits designed with strained silicon MOSFETs are preferred in
digital applications for low power and high speed circuits.
Keywords: Biaxial single channel strained MOSFET, Biaxial dual channel strained MOSFET, Carrier
mobility, Carrier velocity, Compressive strain, Delay, Inverter, Noise Margin, Tensile strain