Author Details

Mukhopadhyay, Subhadeep

  • Vol 4, No 3 (2017) - Research Articles
    Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
    Abstract
  • Vol 5, No 3 (2018) - Research Articles
    Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
    Abstract
  • Vol 4, No 1 (2017) - Research Articles
    Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
    Abstract
  • Vol 4, No 2 (2017) - Research Articles
    Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
    Abstract
  • Vol 3, No 2 (2016) - Research Articles
    Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
    Abstract
  • Vol 3, No 3 (2016) - Research Articles
    Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
    Abstract
  • Vol 3, No 3 (2016) - Research Articles
    Variations of Source Current in the Double-Heterojunction HEMTs
    Abstract
  • Vol 7, No 1 (2020) - Research Articles
    Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
    Abstract